Extended Data Figure 6: Temperature dependence of the charge-neutrality point conductivity for device B.
From: Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
a–c, Gate sweeps for device B at constant B⊥ = 2.5 T and BT = 2.5 (a), 26.5 (b) and 34.5 T (c). d, Conductance at the charge-neutrality point as a function of temperature for the data in a–c. A clear insulating dependence (∂G/∂T > 0) is observed for B⊥ = BT. With increased BT, in the intermediate regime, the double conductance peaks between ν = 0 and ν = ±1 have a weakly metallic temperature dependence (∂G/∂T < 0) whereas Gcnp is very weakly insulating. In the QSH regime (BT 
 B⊥), where the conduction is along edge channels, the temperature dependence at ν = 0 is metallic.
