Fig. 8: Fabrication process of the MEMS accelerometer.
From: A miniaturized MEMS accelerometer with anti-spring mechanism for enhancing sensitivity
a SOI wafer with a low resistivity (0.01 Ω cm) and thick (25 μm) device layer. b Sputtering an Al film with a thickness of 800 nm and patterned by a mixture of H3PO4 (85%), H3NO3, CH₃COOH, and H2O at 45 °C for 2 min. c DRIE to pattern the accelerometer structure using the standard Bosch process for 7.2 min. d HF vapor release for at least 150 min to obtain the moveable structure of the accelerometer
