Fig. 5: Synaptic devices array used for iconic memory and analog recognition.
From: Large-scale high uniform optoelectronic synapses array for artificial visual neural network
a Implemented 28 × 28 synaptic arrays as the trainable memory. The image of the emblem of Beijing Institute of Technology was input into the memory array using 50 spikes of laser irradiation with P = 20 mW/cm2, t = 0.2 s and ΔT = 0.2 s. b Applying different voltage spikes to write and erase the letter “B”, “I”, and “T”. c Schematic diagram of a simulated CNNs with an input layer that captures a 28 × 28-pixel image, a convolution layer with a 3 × 3 kernel, an average pooling layer followed by a fully connected layer and output layer. d The recognition accuracy of the visual signal stimuli for different training iterations under different light illumination
