Fig. 3: Enlarged contrast in crystallization kinetics.

a Representative FDSC traces of Sc_0.1Sb₂Te₃ thin films with Φ ranging from 50 to 20,000 K s⁻¹. The left inset shows a zoom-in view of the crystallization peak temperature (T_p) at low Φ. The right inset shows the FDSC chip sensor employed in this study. b Kissinger plots showing the FDSC data of Sc_xSb₂Te₃ and Ge₂Sb₂Te₅ (obtained by Orava et al.)¹³ thin films, as well as several data points derived from conventional DSC for Ge₂Sb₂Te₅ (obtained by Park et al.)²⁷ samples. The crystallization activation energy E_a for Sc_xSb₂Te₃ and Ge₂Sb₂Te₅ is derived via linear fitting of the respective data in the lower Φ range, as marked by the yellow dashed line. c Temperature-dependent viscosity η of Sc_xSb₂Te₃ and Ge₂Sb₂Te₅ films. The T_g of each film is set as the temperature where η is 10¹² Pa s. The η of Ge₂Sb₂Te₅ at T_m is also plotted in the figure, with the cross (×) indicating the viscosity data measured by an oscillating-cup viscometer³² and the open diamond (◊) the simulated viscosity data¹⁹, showing good agreement with our results. d The viscosity activation energy E_η for Sc_xSb₂Te₃ reaches a plateau when quenched toward T_g, while that of Ge₂Sb₂Te₅ increases monotonically. The inflection temperature, i.e., ~424, ~445, and ~510 K, is determined as the FTS crossover point of Sc_0.1Sb₂Te₃, Sc_0.2Sb₂Te₃, and Sc_0.3Sb₂Te₃, respectively.