Fig. 4
From: Gate tunable giant anisotropic resistance in ultra-thin GaTe
Comparison of the floating gate memory performance of GaTe with other 2D materials. a Memory windows measured in y direction. b Demonstration of erasing and programming pulses measured in y direction. c Retention time test of the device at on and off states. d Summary of the performance of FGM made by 2D materials. Data in a, b are measured in sample S6, and data in c, d are measured in sample S4. Vds = 2 V was used in the above measurements
