Fig. 1
From: Ballistic superconductivity and tunable π–junctions in InSb quantum wells
Ballistic superconductivity in InSb 2DEGs. a Cross-sectional schematic and false-colored scanning electron micrograph (along with a measurement schematic) of a top-gated JJ of width W and length L. b Differential resistance, dV/dI, versus perpendicular magnetic field, Bz, and current bias, I, displaying a Fraunhofer-like interference pattern for a JJ with W = 9.7 μm, L = 1.1 μm. White line indicates the magnitude of the switching current, Is, at zero magnetic field. c dV/dI as a function of I and gate voltage, Vg, for the same JJ, showing gate control of Is. d Length dependence of IsRn for JJs on a high mobility (black dots) and low mobility (red dots) wafer, obtained at Vg = 0 V. Dashed lines are 1/L and 1/L2 fits to the data, indicating ballistic and diffusive transport, respectively
