Fig. 2: Magnetic evolution via electrically induced protonation.
a Temperature dependent longitudinal resistivity \(\rho _{XX}\) at different VG. The inset shows the corresponding differentiate resistivity d \(\rho _{XX}/{\mathrm{d}}T\) at different VG. A vertical offset of 20 μΩ cm is applied for each curve for clarity. b Magnetic field dependent magnetoresistance (MR) measured at 2 K with different VG. c Magnetic field dependent Hall resistivity measured at 2 K with different VG. The inset shows the VG dependence of carrier density at 2 K. d Temperature dependent anomalous Hall resistivity obtained at μ0H = 0 T with different VG. e Kerr rotation vs. magnetic field results measured at 80 K with different VG. f Kerr rotation as a function of temperature obtained at μ0H = 0 T with different VG. The slightly varied threshold gate voltages among transport, MOKE and XRD measurements are attributed to the different device configurations.
