Fig. 5: The interface barrier dependence of MR at Fe0.29TaS2/SC interface.

The MR ratio as a function of the interface resistance area product (RJS) measured on various devices in the low voltage bias region. Inset: Schematic of the incident spin-polarized electrons into the interfacial spin-triplet SC via interface barrier with Rashba SOC. The Rashba SOC modifies the interface barrier strength (Z) to be \({Z}_{\pm }=Z\pm {\bar{\gamma }k}_{\parallel }\), where \(\bar{\gamma }\) is the SOC parameter and \({k}_{\parallel }\) is the in-plane wave vector25. The blue, red, and green dots represent the MR of devices A, B, and C, respectively. The error bars correspond to one standard deviation.