Fig. 4: Current-dependent voltage-driven frequency tuning of SHNO.
From: Voltage-driven gigahertz frequency tuning of spin Hall nano-oscillators
a–e PSDs as a function of current for sequentially applied gate voltages, \({V}_{{{{{{\rm{g}}}}}}}\)= 0 V (initial state) (a), \({V}_{{{{{{\rm{g}}}}}}}\)= +4 V (b), \({V}_{{{{{{\rm{g}}}}}}}\)= +5 V (c), \({V}_{{{{{{\rm{g}}}}}}}\)= −2 V (d), and \({V}_{{{{{{\rm{g}}}}}}}\)= −3 V (e). \(B\)= 0.56 T. f, Threshold current (\({I}_{{{{{{\rm{th}}}}}}}\)) according to the sequentially applied gate voltages, extracted from Fig. 4a–e. The error bars are due to the uncertainty in the linear fit of the data in Supplementary Fig. 13a–e.
