Fig. 2: Gate-tuned Hall resistance and carrier density dependent band topology. | Nature Communications

Fig. 2: Gate-tuned Hall resistance and carrier density dependent band topology.

From: Electrically controlled superconductor-to-failed insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes

Fig. 2

a Temperature-dependent Hall effect in device #4 under different gating voltages. b Gate-dependent carrier density in device #4 at 5 K. Sweeping the gate voltage from 6.4 V to −6.1 V, the band structure evolves from a hole band to an electron band in the low temperature region. c Carrier density dependent T* in different samples.

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