Fig. 3: Device physics. | Nature Communications

Fig. 3: Device physics.

From: Lifetime over 10000 hours for organic solar cells with Ir/IrOx electron-transporting layer

Fig. 3

The optical simulation for the exciton generation rate profiles of BHJ films in the (a) ZnO- and (b) Ir/IrOx-based OSCs. c The plot of exciton generation rate with the depth of active layer extracted from optical simulations. Transient photocurrent (TPC) plots (d) and electrochemical impedance spectroscopy (EIS) (e) of PM6:Y6 devices based on ZnO and Ir/IrOx ETLs. In the equivalent circuit of EIS, the Rs represents the series resistance and R1 and R2 are shunt resistances. The capacitors are represented by C1 and C2. f Dark current curves of single-electron PM6:Y6 devices based on ZnO and Ir/IrOx ETLs, respectively.

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