Fig. 8: Structural and electrical transport characterization of Nd4Ni3O10 and Nd4Ni3O8 on NdGaO3 (110).
From: Limits to the strain engineering of layered square-planar nickelate thin films
a XRD scans of an as-synthesized Nd4Ni3O10 and reduced Nd4Ni3O8 film on NdGaO3. The film is 25.5 nm and reduced for 3 hours at 300 °C. The vertical solid and dashed lines denote the 00l peak positions of bulk Nd4Ni3O10 and Nd4Ni3O8, respectively. The primed indices distinguish the reduced square-planar phase from the as-synthesized Ruddlesden–Popper. The asterisks denote NdGaO3 substrate peaks. b Resistivity measurements of the Nd4Ni3O10 and Nd4Ni3O8 films in (a). Data reproduced from ref. 14.
