Fig. 3: Analysis of charge extraction and recombination mechanisms.

a Differential capacitance vs. open-circuit voltage and b Charge carrier lifetime determined from TPV vs. the spatially averaged charge carrier density determined from the differential charging method of the Y6 CF/PM6 and the Y6 CB/PM6 device. The difference in charge carriers stored in the active layer under 1 sun illumination and the shift in the electronic bandgap are highlighted in (a). SPV measurements of c 30 nm PM6 on Y6 CF and Y6 CB, and d 5 nm PM6 on Y6 CF and Y6 CB. e A schematic of energy levels in bilayers to illustrate the effect of the quadrupole moment-induced band bending on interfacial recombination in bilayer devices. Δ+ indicates the interfacial band bending by the positive quadrupole moment.