Fig. 2: Characterization and performance tests of the metasurfaces.
From: Single-shot isotropic differential interference contrast microscopy
a, b SEM image of the fabricated metasurface. Images of a-DIC (c) microscopy and i-DIC (d) microscopy under white-light illumination in transmission mode. e The schematic configuration of the metasurface DIC microscopy. CL, collimating lens, P1 and P2, a pair of crossed polarizers. TL, tube lens. CMOS complementary metal oxide semiconductor. f–i Imaging result of the 1951 USAF test chart and Horizontal cross-section of the intensity distributions with NA 0.1 (f, g) and NA 0.7 (h, i). a. u. arbitrary units. The designed parameters of metasurfaces used in panel f (panel h) are the diameter D = 200 μm (200 μm), focal length f = 1 mm (100 μm), shear 2Δs = 1 μm (0.4 μm), and the bias 2Δφ = π (π).
