Fig. 3: Charge localization at a curved MoS2.
a STM topography and b TBH mapping at 70 V of gate bias as electron-doping. c–e the correlations among the averaged line profiles of (c) the surface morphology, (d) absolute curvature, and (e) relative TBH difference (ΔTBH) of the area shown in (a). The average values for plots were obtained in the axis of 12 nm in (a, b). (Supplementary Fig. 7 for each curvature value) The sample bias of −3 V was applied. f Structural model of curved monolayer MoS2. g Calculated doping charge density (∆ne) of ±2e/unit-cell in (f), where e is the electron charge and the sign of +(−) is the addition of electrons (holes). h Calculated local work function variation (ΔΦ) in (f) depending on the doping concentration. Electron-/hole-doping of ±2e/unit-cell is ±15.8 × 1013 cm−2. High curvature regions are red-shaded.
