Fig. 2: Device characteristics of nonvolatile FD.
From: All-ferroelectric implementation of reservoir computing
a Schematic of the Pt/BFO (grown under 15 Pa oxygen pressure)/SRO nonvolatile FD where Eimp is absent. b P–V hysteresis loop measured using the applied waveform shown in the inset. The frequency of the measurement waveform is 3 kHz, and the delay period is 1 s (these parameters are always used for P–V loop measurements hereafter unless otherwise mentioned). c I–V characteristics measured with a voltage sweep of 3 V → −3 V → 3 V. d LTP and LTD characteristics (read at 0.8 V) measured with amplitude-varying positive and negative pulses, respectively. The insets show the schematics of the applied positive and negative pulses. Retention behaviors of the conductance states obtained during the e LTP and f LTD processes.
