Fig. 3: Device characteristics of volatile FD.
From: All-ferroelectric implementation of reservoir computing
a Schematic of the Pt/BFO (grown under 19 Pa oxygen pressure)/SRO volatile FD where Eimp exists. b P–V hysteresis loop measured using the applied waveform shown in the inset. c I–V characteristics measured with a voltage sweep of 3 V → −3 V → 3 V. d Current decay characteristics after applying a −2.5 V/2 ms write pulse. e Current responses to 5 –2.5 V/2 ms write pulses. The upper panel shows the schematics of the applied write pulses followed by constant read voltages (−1.2 V). The inset shows the evolution of the read current as a function of the write pulse number. f FFT spectra of the output currents from the volatile FD which is subjected to input sinusoidal voltage waves with different frequencies.
