Fig. 1: Device structures and high-resolution transmission electron microscopy (HRTEM) images of atomic layer deposition (ALD) deposited In2O3 transistors.
From: Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors
a Schematic of a 2 nm In2O3 transistor. The inset shows the HRTEM image of the ALD-deposited ultrathin In2O3 films. The scale bar is 5 nm. b Tauc plot of the In2O3 films as a function of film thickness. The fitting of the curve is done based on the Tauc model (α: absorption coefficient; h: Planck’s constant; ν: frequency of vibration). c Transfer curves of 2 nm In2O3 transistors with channel width/length of 10/2 µm and annealed under N2 and O2 for 30 min at 150 °C. Note that the amounts of threshold voltage (VT) shifts are saturated after 30 minutes (ID: drain current; VD: drain voltage; VG: gate voltage).
