Fig. 2: VT tuning in ultrathin In2O3 transistors via ultraviolet (UV) exposure.
From: Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors
a A schematic of VT tuning in ultrathin In2O3 transistors through UV exposure combined with thermal annealing; the inset is the microscopic image of the transistor with a scale bar of 5 µm. b Transfer curves of 2 nm In2O3 transistors with channel width/length of 10/2 µm after post treatments. The arrow represents the transition of transfer curves with UV light exposure (red lines) and O2 annealing (blue lines) (ID: drain current; VD: drain voltage; VG: gate voltage). c A contour plot of VT shifts as a function of UV exposure time and power density. Devices were annealed at 150 °C in O2 for 30 min to reset the VT before each UV exposure measurement. The absorbed power density increasing from 1\(\times\)106 mW cm−2 to 1\(\times\)108 mW cm−2 for exposure times from 30 s to 300 s under 365 nm laser illumination. The measurement time interval is 30 s and the transfer characteristics of the device are immediately measured (<5 s) after UV illumination. The plot consists of 7 different power densities and 10 different exposure times.
