Fig. 5: Applications of ultrathin In2O3 transistor with laser exposure.
From: Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors
a A schematic and optical microscope image of In2O3 inverter (h: Planck’s constant; ν: frequency of vibration; VDD: drain voltage; VSS: source voltage; VIN: input voltage; VOUT: output voltage). b The voltage transfer characteristics of 2 nm In2O3 inverter with channel width/length of 10/2 µm before UV laser illumination. c The voltage transfer characteristics of In2O3 inverter of 2 nm In2O3 inverter with channel width/length of 10/2 µm after UV laser illumination. d A schematic of ultrathin In2O3 transistor with multi-state logic function (VG: gate voltage; ID: drain current; R1: resistance of first channel; R2: resistance of second channel; VT1: threshold voltage of first channel; VT2: threshold voltage of second channel). e, The transfer characteristics of In2O3 transistor with UV laser illumination on the specific area. f The transfer characteristics with the first-order derivative of log(ID) from e.
