Fig. 2: Field effects on the transport and photocurrent response of a 6-layer BP device.

a The conductance of the dual-gate BP transistor as a function of the bottom gate (\({V}_{{{{{{\rm{bg}}}}}}}\)) at different top gate biases (\({V}_{{{{{{\rm{tg}}}}}}}\)) from \(-6.0\ {{\mathrm{V}}} \) to \(8.0\ {{\mathrm{V}}} \). The source-drain bias is \(200\ {{\mathrm{mV}}} \). b Schematic energy band diagram, and wave functions of the ground states of an intrinsic BP QW and the same QW under an electric field, illustrating QCSE. c The normalized photocurrent spectra of the 6-layer BP device under a series of electrical field from \(0\,{{{{{\rm{V}}}}}}\ {{{{{{\rm{nm}}}}}}}^{-1}\) to \(1.07\ {{{{{\rm{V}}}}}}\ {{{{{{\rm{nm}}}}}}}^{-1}\). The dashed line indicates the evolution of the peak position. Spectra are shifted vertically for clarity. d The \({E}_{11}\) position (black dot) extracted from Fig. 2c as a function of the external field. The red solid curve represents a quadratic fit of the experimental data.