Fig. 2: Material characterizations of ZnO channel layer. | Nature Communications

Fig. 2: Material characterizations of ZnO channel layer.

From: CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Fig. 2

a SEM image of the ZnO TFT channel and cross-section schematic. b TEM image of the ZnO TFT stack, with the different layers labeled. c, d GI-XRD scan, and average crystallite sizes (with error bar) calculated from the Scherrer’s formula, respectively, of the three different temperatures deposited ZnO films. e, f O1s XPS spectra of the ZnO channel layers deposited at three temperatures as indicated, and plot showing the Zn–O, VO, and −OH atomic percentages (with error bar) as a function of the three different temperatures used12,17,49,50,51.

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