Fig. 1: Working mechanism and design principle for electro-responsive quantum interference switching foldamers in this work.
From: In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
a Schematic illustration of polarization induced electro-responsive quantum interference switching in heterocycle-benzene stacking foldamers and conceptualized demonstration of their possible application on memory elements as TRNG and axon-like voltage-gated channels. The number 0 labels the low conductance state while the number 1 labels the high conductance state. The green memristor represents f-Fu while the blue one represents f-Th. b Chemical structures of benzene, thiophene and furan, and the electrostatic potential distribution (ESP) of benzene-benzene stacking and heterocycle-benzene stacking models with their dipole moments. c Chemical structures of f-Fu and f-Th and their corresponding single crystal structures with labeled torsion angles of the stacked arms and labeled distance between sulfur atoms of thiomethyl groups.
