Fig. 2: Break junction conductance measurement of foldamers in tetrahydrofuran/mesitylene (THF/TMB, 1:4, v/v) mixture.
From: In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
a 1D conductance histograms of f-Fu at 0.1 V and 0.2 V. 2D conductance‒displacement histograms of f-Fu at 0.1 V (b) and 0.2 V (c, d) with inserted relative displacement distribution histogram. The black dashed lines circle out the density clouds of conductance distribution with labeled conductance peaks. Junction formation probabilities for HC and LC states is also provided. e 1D conductance histograms of f-Th at 0.1 V and 0.2 V. 2D conductance‒displacement histograms of f-Th at 0.1 V (f) and 0.2 V (g, h) with inserted relative displacement distribution histogram. Junction formation probabilities for HC and LC states is also provided. i 1D conductance histograms of f-Ph at 0.1 V and 0.2 V. j Statistic conductance data of f-Fu, f-Th and f-Ph under different applied biases. k Statistic junction formation probabilities of f-Fu and f-Th under different applied biases. The error bars are the standard deviation of multiple results for junction formation probabilities in conductance measurment over three times. l Representative conductance‒displacement traces of different states of f-Fu and f-Th at 0.2 V. The blue shaded region represents high conductance states while the green one represents low conductance states.
