Fig. 7: The conceptual illustration of memory elements based on foldamers.
From: In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
a The TRNG model using foldamers as memristor to cooperate bits random flipping with random delay time, where the memristor is turned on with stochastic delay times, resulting in random time window for counter flipping and thus stochastic number outputs. b The schematic illustration of artificial neuron based on volatile foldamer memristor, where the input of voltage pulses can be translated into signal outputs if a threshold (Vth) has been reached, resulting the deformation of foldamers. c The schematic illustration of the half transection of metal–SAM–metal perpendicular architecture that can be integrated into devices array, where SAM refers to the self-assembly monolayer for molecules.
