Fig. 2: Resolved electron and hole signals by constant light-induced magneto transport technique in p-type silicon. | Nature Communications

Fig. 2: Resolved electron and hole signals by constant light-induced magneto transport technique in p-type silicon.

From: Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Fig. 2

a Conductivity, b Hall coefficient, and c Hall mobility were measured by the 4-probes CLIMAT as a function of photon generation rate. d Electrons n(G) and holes p(G) concentrations as a function of the generation rate as extracted by CLIMAT.

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