Fig. 1: Adapted grain-boundary barrier model in indium tin oxide at different temperature ranges. | Nature Communications

Fig. 1: Adapted grain-boundary barrier model in indium tin oxide at different temperature ranges.

From: Thermo-optic epsilon-near-zero effects

Fig. 1

a The energy levels of a degenerate semiconductor such as indium tin oxide. b Oxygen diffusion mechanism in the sub-annealing ___domain with increasing temperature. c Permanent structural change above the annealing threshold.

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