Fig. 2: In-situ biasing-induced interlayer sliding in InSe:Y by HRTEM and the I-V curves during the polarization switching by CAFM.
From: Atomic-level polarization reversal in sliding ferroelectric semiconductors
a Schematic of the in-situ biasing system providing the OOP electric field. b HRTEM snapshots during in-situ biasing TEM analyses at different biasing voltages with the FFT patterns in insets. c The AFM image of InSe:Y flake for CAFM measurements (see the inset). d The I-V loop from CAFM measurements. e The corresponding bias-dependent resistance (R-V) curve from (d). The pink arrows in (d) indicate current jumps as the voltage increases (the pink line), corresponding to the abrupt resistance shifts in (e). f The scheme for different (or multiple) polarization states during polarization switching.
