Fig. 1: Design and fabrication of ZnO resonant nano-accelerometers.

a Three-dimensional overview. b Detailed schematics showing. c Fabrication flow processes. The trenches were etched in the 25 μm silicon device layer of SOI substrate and depositing Cr/Au electrodes on the surface after SiO₂ deposited by chemical vapor deposition (CVD). The accelerometer structure was etched with deep reactive ion etching (DRIE) to form the silicon proof mass and microleverages. The silicon proof mass was released by etching handle layer and buried silicon dioxide (BOX) layer with DRIE methods. The ZnO nanowires were transferred with optical microscope nanomanipulation technique and fixed with FIB technique. d The scanning electron microscope (SEM) image of the accelerometer structure. e, f SEM images of the ZnO nanobeam. g The SEM image of the backside of the accelerometer. h The wire-bonded and installed ZnO resonant nano-accelerometer.