Fig. 1: Schematic of the experimental configuration and device characterization.
From: A nanoscale photonic thermal transistor for sub-second heat flow switching
a False-colored scanning electron microscope (SEM) image of the nanofabricated source and drain device, showing a coplanar silicon nitride (SiN) membrane device with integrated Pt serpentine. b False-colored SEM image of the fabricated gate device featuring an incorporated Si heater and a layer of VOx. c Schematic of the nanofabricated three-body system. IAC represents the amplitude of the AC current supplied to the source and IDC is the magnitude of the DC current supplied to the drain. d Confocal microscope scan of the source-drain device. e Profile along the dashed scan line in Fig. 1d, demonstrating excellent planarity of the device. f Atomic force microscopy (AFM) image of the gate coated with VOx. The inset in Fig. 1f indicates a scanned height profile along the dashed line. g The amplitude of the temperature oscillation of the drain (ΔTD) was studied as a function of the amplitude of temperature oscillations of the source (ΔTS). The source temperature was modulated at a frequency of 2 Hz, with the gate positioned far away (d ~ 25 µm) from the source-drain device, while maintaining a temperature of 25 °C.
