Fig. 1: Fabricating MOS micropatterns based on MPL.

a Chemical components of the precursor photoresists: acrylic metal complexes, initiator (DETC), and free radical trapping agent (BTPOS). b Step-by-step schematic diagram of the additive manufacturing process of MOS via MPL. HDU stands for Hangzhou Dianzi University. c The images of different acrylic metal complexes based precursor photoresists. Patterns of d zinc oxide, e copper oxide, and f zirconium dioxide manufactured using our strategy (zinc oxide at 25 mW and 2 mm s⁻¹, copper oxide at 20 mW and 3 mm s⁻¹, and zirconium dioxide at 20 mW and 10 mm s⁻¹). Scale bar: 5 μm. SEM images and EDS maps of zinc-containing grid patterns g before pyrolysis and h after pyrolysis. Scale bar: 50 μm. i EDS spectrum taken from an internal beam region of zinc-containing patterns after pyrolysis. j TEM selected area electron diffraction (SAED) patterns taken from the pyrolyzed zinc-containing sample. k, l High-resolution TEM images obtained from the pyrolyzed zinc-containing sample. Scale bar: 2 nm. m XRD spectra of pyrolyzed zinc-containing sample. n XRD spectrum of pyrolyzed copper-containing sample. o XRD spectra of pyrolyzed zirconium-containing samples. p The shrinkage rate of the ZnO patterns after pyrolysis, the inset shows the pattern used in the shrinkage test. Scale bar: 20 μm. The patterns in f, g, and p were fabricated at 25 mW and 2 mm s⁻¹.