Fig. 2: Ultra-high precision nano additive manufacturing of MOS via MPL.
a The diffusion of free radicals can lead to the occurrence of unexpected polymerization reactions. The addition of BTPOS (a radical trapping agent) can inhibit the unwanted polymerization reactions and reduce feature size. The relationship between the line widths and laser power for CuO (b), ZrO2 (c), and ZnO (d–f). Scale bar: 500 nm. g Theoretical linewidth comparison of one-photon, two-photon, and three-photon exposures using parallel lines as models. For a fixed exposure time, the threshold dose is converted to the threshold intensity, and the theoretical line width is obtained from the full width at half maximum (FWHM). N represents the nonlinearity absorption exponent of photoresists to the laser. axy is the critical period of photoresist under specified conditions in MPL. h The double-logarithmic representation of the excitation laser power (Pth) versus the exposure time (texp) for MPL. The dashed curve is a linear fit to the data, and nonlinearity absorption exponent N is calculated from the slope of the linear fit line (N = −1/slope). i Comparison of critical dimensions of MOS additive manufacturing technologies. Data and references are listed in Supplementary Table 2.
