Fig. 4: Possible mechanisms of the magnon FET device.
From: A nonvolatile magnon field effect transistor at room temperature
a Non-local \({{V}}_{{{\rm{nl}}}}^{{{\rm{DC}}}}\) amplitude as a function of the gate voltage \({{V}}_{{{\rm{g}}}}\) for device 2 (gate stripe width: ~526 nm), with an on/off ratio of ~115% for \(\pm 200\,{{\rm{V}}}\). Error bars are obtained from repeated measurements for each \({{V}}_{{{\rm{g}}}}\). b Temperature variation \(\varDelta {T}\) of the S-stripe (green curve) and D-stripe (blue curve) relative to the ambient temperature for different \({{V}}_{{{\rm{g}}}}\), with a 0.5-mA DC current applied to the S-stripe. The red curve represents the temperature difference between S- and D-stripes. c Voltage-dependent strain curve along the [100] direction for the PMN-PT(011) substrate, exhibits a mainly symmetric butterfly-shaped feature. d–f Local SSE signals for three stripes of \({{V}}_{{{\rm{g}}}}= \pm 200\,{{\rm{V}}}\), respectively.
