Fig. 1: Schematic diagram of the antiferromagnetism-induced disorder and pertinent localized transport.
From: Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization
a The atomic arrangement of NbFeTe2 (NFT). b The magnetic moment distribution within the NFT. c Due to the differing spin directions of electrons between the spin lattices of neighboring antiferromagnetic (AFM) phases, the phenomenon of magnetic moment flipping is more likely to occur during carrier transport. d This leads to the local formation of magnetic domains caused by magnetic moment disorder, e which in turn localizes carrier transport. Here, the energy expended \({U}_{{eff}}\) is proportional to the motion trajectory length l. f Schematic representation of the physical model for carrier localization due to magnetic domains. Modeling of two transport mechanisms for generating photocarriers from localized states: g radiative-induced conductance change and (h) the self-powered photocurrent associated with Seebeck potential difference (\(\nabla V(x)\)) induced thermal-activation transport under asymmetrical condition.
