Fig. 3: Evidence for the presence of hopping and bolometric effects.
From: Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization
(symmetric bow-tie devices) a Conceptual view of the THz detector integrated with a bow-tie antenna based on NFT. b The physical models of carriers hopping which could switch between variable range hopping (VRH) and the nearest neighbor hopping (NNH) under THz radiation. c The spectrum response of bolometric device as assisted by the butterfly antenna. d The linear voltage-dependence of bolometric response due to the radiation-heating induced conductance change. e The derived resistance change at different temperatures following the on/off modulated THz radiation at 0.11 THz. f The extracted response at different temperatures with 3 dB electrical bandwidth is shown in the inset. g The pulsed response of photocurrent at different temperatures exhibits an improved signal-to-noise ratio taken at hopping-transport regime. h The responsivity versus temperature at different bias voltage and validation of THz-field induced thermal activation transport in (i).
