Fig. 3: Atomic micro/nanostructural characterization of Pb0.98Cu0.042Se (x = 0.02). | Nature Communications

Fig. 3: Atomic micro/nanostructural characterization of Pb0.98Cu0.042Se (x = 0.02).

From: Lattice defect engineering advances n-type PbSe thermoelectrics

Fig. 3

a Low-magnification scanning transmission electron microscopy (STEM) image displaying dense Cu-rich nanoprecipitates (denoted by the green arrows). b, c Atomic-resolution STEM images and corresponding atomic model clearly indicating the structure of Cu2Se along the [10-1] and [0-10] zone axes, respectively. The inset in (c) is the corresponding fast Fourier transform (FFT) image. d, e High-resolution high-angle annular dark-field (HADDF) STEM images of the semicoherent interfaces at the phase boundary between the Cu2Se nanoprecipitate and PbSe matrix viewed along different zone axes. The phase interfaces and dislocations are marked by dashed lines and yellow symbols respectively. f High-resolution HADDF-STEM image of a typical dislocation. The yellow arrows give a complete Burgers loop of a dislocation, and the estimated Burgers vector (red arrow) is BD = 1/2[101]. The dislocation is marked by white symbols. The inset image shows the geometric phase analysis (GPA) strain analysis of the entire area in (f). g Illustration of the semicoherent Cu2Se nanoprecipitates and influence on phonon and electron transport.

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