Fig. 5: Schematic diagram of the enhanced activity and stability caused by Se doping.
From: Orbital-level band gap engineering of RuO2 for enhanced acidic water oxidation
a Ru-d orbital splitting and hybridization schematic. b Band structures of the compounds synthesized from RuO2 and Se-RuOx during the OER process. The position of the O2/H2O redox couple is 1.23 V versus RHE, as shown schematically on the right. The relationship between the voltage under the RHE and standard hydrogen electrode (SHE) scale is ƐRHE=ƐSHE + 59 mV×pH (pH=0 in 0.5 M H2SO4). c Schematic band structure of different active centres. d Adsorption/desorption and electron transfer processes of OER intermediates on the surface of the traditional LOM pathway (on RuO2 surface) and LOM-OVSM pathway (on Se-RuOx surface) (LOM lattice oxygen oxidation mechanism, LOM-OVSM lattice oxygen-mediated mechanism-oxygen vacancy site mechanism).
