Fig. 3: Characteristics of discrete IGZO TFTs and OPDs. | npj Flexible Electronics

Fig. 3: Characteristics of discrete IGZO TFTs and OPDs.

From: Curved digital X-ray detectors

Fig. 3

a Transfer characteristics of 25 IGZO TFTs (W/L 60/20 µm) distributed over a GEN1 substrate (320 × 352 mm), measured at a source–drain voltage of 1 V. b Current density of OPD as a function of voltage under dark (blue) and low light intensity (red) conditions (light intensity of ca. 0.1 mW/cm2). c Current density of OPD as a function of time measured at −2 V under dark conditions. d EQE (blue) and spectral response (red) of OPD as a function of wavelength.

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