Fig. 1: Device operation.
a False-coloured SEM image of a CMOS quantum dot device similar to the one used in this work. A pair of split gates (purple) is deposited on top of the channel (yellow) and SiN spacers (dark pink) are created to protect the channel from in-situ doping of the reservoirs. b Cut through the device along the gates, showing the position of the SET and the QD. The micromagnet added on top is magnetized by the external magnetic field BZ,0. c Stability diagram in the few electron regime for the quantum dot formed under gate GQD. The current flowing through the quantum dot formed under gate GSET is used for charge sensing. An abrupt shift in the conductance peak corresponds to an electron entering or leaving the QD. In the inset a zoom on the transition used for the following measurements is shown. d Simulation of the magnetic gradients created by the micromagnet. The transverse gradient dBx/dz (red) and the longitudinal gradient dBz/dz (blue) are plotted against the position across the nanowire. The gray line represents the estimated position of the QD.
