Fig. 3: The magneto-transport data.
The upper and lower panels of a show the field dependence of the sheet resistance Rs and Hall resistance Rxy, respectively, in Al(1 nm)/Nb(10 nm)/SR-STO sample at temperature varying from 2 K to 7 K. The field is applied perpendicular to the film surface as illustrated in the inset figure of the lower panel. b The field anisotropy of upper critical field Hc2 as a function of reduced temperature T/Tc for samples using different substrates of SR-STO, SiO2/Si, and STO. c A comparison of the magnetoresistance (MR) in the normal state. The green and black lines are the MR curves with field perpendicular to the film surface and field parallel to the in-plane current direction, respectively. A large positive MR was observed in the sample with Sub. = SR-STO (left panel), which is more than two orders of magnitude larger than that with Sub. = SiO2/Si (middle panel) and Sub. = STO (right panel).
