Extended Data Fig. 5: Gate dependence of IX PL intensity and lifetime in 1 L/3 L heterostructure.
From: Layer-dependent correlated phases in WSe2/MoS2 moiré superlattice
(a) Steady-state PL intensity vs bottom and top gate voltage at temperature 5 K. PL intensity value peaks at insulating phases with integer filling factor. The peak intensity paths do not follow straight lines. (b) Gate-dependent time-resolved PL. The label shows the VG values. Here, VE = 0V is used. (c) Lifetime vs bottom and top gate voltage. Compared to (a), there is a strong correspondence between PL lifetime and intensity. (d) VG and (e) VE dependent lifetime and integrated PL intensity. The strong correspondence between lifetime and intensity is also observed when the intensity is obtained by integrating the time-resolved PL. Peaks are observed at integer filling factors (labelled in (d)). The gate dependence of the 1 L/3 L heterostructure IX PL spectrum is given in Supplementary Fig. 8.
