Extended Data Fig. 3: More magneto-transport properties of Device A.
From: Electrical switching of the edge current chirality in quantum anomalous Hall insulators
a, μ0H dependence of ρyx without tuning Vg after SOT switching at ρyx(0) ~ 0.27 h/e2 and T = 20 mK. After SOT-induced switching, ρyx(0) is ~ −0.225 h/e2. After applying μ0H ~ 0.5 T to align the magnetization, ρyx(0) ~ 0.268 h/e2. Therefore, the SOT magnetization switching ratio at ρyx(0) ~ 0.27 h/e2 by applying |Ipulse|~200 μA under μ0H|| = +0.05 T is ~ 0.225/0.268 = 83.9%. Here the switching ratio is defined as the absolute value of the zero magnetic field Hall resistance ratio before and after magnetic training. When the sample magnetization is fully aligned, the negligible ρyx difference suggests the gating effect induced by the injection of Ipulse is much weaker when the SOT switching is done at |ρyx(0)| ~0.27 h/e2. The red dashed curve corresponds to the initial magnetization process after SOT switching. b, μ0H|| dependence of ρyx at T = 20 mK when the sample is tuned to ρyx(0) ~ 0.27 h/e2. We find that the anisotropy field K is ~0.7 T and thus the sample magnetization almost points upward and downward under |μ0H||| = 0.05 T.
