Extended Data Fig. 8: Combined effect of voltage control of magnetic anisotropy and STT on SOT-induced switching for the free layer initially pointing down.
a,b, Schematics of the SOT-dominated switching mechanism for the reference layer pointing a, up and b, down. Black arrows indicate the directions of rf currents, white arrows indicate the magnetization state. The STT (red arrow) given by VSTT either a, opposes or b, assists the SOT switching induced by VSOT (yellow arrow). c, Averaged time traces of SOT-induced AP-P switching with VSTT= −197, +73, +232, +447 mV for VSOT= +394 mV and τp=20 ns. d, Evolution of the critical voltage as a function of pulse length for different STT contributions as given by the VSTT/VSOT ratio. e, Normalized critical voltages \({v}_{\mathrm{c}}^ \uparrow\) and \({v}_{\mathrm{c}}^ \downarrow\) as a function of inverse pulse length for different VSTT/VSOT ratios. The magnetization of the reference layer points either up (\({v}_{\mathrm{c}}^ \uparrow\)) or down (\({v}_{\mathrm{c}}^ \downarrow\)), corresponding to the situation depicted in a, and b, respectively. Evolution of f, the average critical voltage \(\bar{{v}}_{\mathrm{c}}\) (VCMA-like contribution) and g, voltage asymmetry Δvc (STT-like contribution) as a function of VSTT/VSOT for short and long pulses. All measurements are performed at μ0Hx= +90 mT, VSOT>0 and correspond to AP-P (respectively P-AP) switching for the reference layer pointing up (down) and free layer initially pointing down.
