Fig. 3: Characterization of the photonic quantum memristor.
Experimental results (blue lines) and simulated dynamics (red lines) for different frequency regimes. The oscillation period is kept constant at Tosc = 10 s, and the integration time T is varied in the range of one period. Since the high-frequency limit is, in this case, the same as T = Tosc, this provides a full characterization of the dynamic response of the device (Supplementary Section D). The experimental data are in perfect agreement with the simulated dynamics. Specifically, the low-frequency limit is 〈nout〉LF = 〈nin〉 – 〈nin〉2, whereas the high-frequency limit is 〈nout〉HF = 0.5〈nin〉. This is also in perfect agreement with the original definition of a memristive device18.
