Extended Data Fig. 5: Hysteretic signature in Hall measurements for device H2.
From: Unconventional ferroelectricity in moiré heterostructures
a, b, The resistance measured while sweeping the externally applied displacement field Dext in the forward (a) and backward (b) direction at each fixed carrier density next. The carrier density scan direction is from the negative to positive values. c–e, Carrier density extracted from Hall measurements along the lines L1 (c), L2 (d) and L3 (e) denoted in a. Red and blue curves were taken during the forward and backward scan of Dext, respectively.
