Extended Data Fig. 13: Influence of Kv4.2–DPP6S interface mutations on DPP6S modulation.
From: Structural basis of gating modulation of Kv4 channel complexes

a-g. Peak conductance-Voltage (Gp-V) relationships of WT with (black circle) or without (white circle) DPP6S, and each mutant with (coloured symbol) or without (coloured open symbol) DPP6S obtained from Supplementary Fig. 9a. Symbols and bars represent means ± s.e.m. (n = 8). h-n. Comparison of the voltage-dependent prepulse inactivation for WT with (black circle) or without (white circle) DPP6S, and each mutant with (coloured symbol) or without (coloured open symbol) DPP6S obtained from Supplementary Fig. 10. The fractional recovery at each point was determined by normalizing the peak current amplitude of the test pulse by the test pulse after the prepulse of -120 mV and fitted with single Boltzmann functions. Symbols and bars represent means ± s.e.m. (n = 8). o-u. Comparison of the recovery rate from inactivation among WT with (black circle) or without (white circle) DPP6S and each mutant with (coloured symbol) or without (coloured open symbol) DPP6S, obtained from Supplementary Fig. 11. The fractional recovery at each point was determined by normalizing the peak current amplitude of the test pulse by the amplitude of the prepulse. Symbols and bars represent means ± s.e.m. (n = 8). Lines represent single-exponential fits.