Extended Data Fig. 3: Iterative write–verify RRAM programming.
From: A compute-in-memory chip based on resistive random-access memory
a, Flowchart of the incremental-pulse write–verify technique to program RRAMs into target analogue conductance range. b, An example sequence of the write–verify programming. c, RRAM conductance distribution measured during and after the write–verify programming. Each blue dot represents one RRAM cell measured during write–verify. The grey shades show that the RRAM conductance relaxation cause the distribution to spread out from the target values. The darker shade shows that the iterative programming helps narrow the distribution. d, Standard deviation of conductance change measured at different initial conductance states and different time duration after the initial programming. The initial conductance relaxation happens at a faster rate than longer term retention degradation. e, Standard deviation of conductance relaxation decreases with increasing iterative programming cycles. f, Distribution of the number of SET/RESET pulses needed to reach conductance acceptance range.
