Figure 2
From: Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
Optimal Mie scattering parameters for obtaining enhanced reflectance of incident heat radiation. (a,c) Maxima in scattering efficiency Q sca, and, (b,d) minima in anisotropy factor g as a function of the microinclusion size d and the wavelength λ for the different materials considered here. (e) Forward (Q fs) and back (Q bs) scattering efficiencies along with a deconvolution of Q bs into contributions from the dipole and higher order modes (n = 1, 2, and 3) as a function of the wavelength λ for PbS microinclusions of diameter \({d}_{{g}_{{\rm{\min }}}}=1.34\) μm corresponding to the minima g min in scattering anisotropy factor. The colored vertical arrows represent the bandgap wavelengths λ bg and in (e) the green vertical arrow represents the λ bg for PbS. A sharp switch from forward (+g) to backward scattering (−g) with an increase in the particle diameter d close to the bandgap wavelength (λ bg) in all materials points to the presence of Fano resonances50, 51. An inverse hierarchy of scattering resonances is also observed wherein the octupole (n = 3) mode is the strongest followed by quadrupole and dipole modes in contrast to Rayleigh scattering for the smaller particles.
