Figure 3
From: Impact of transient currents caused by alternating drain stress in oxide semiconductors
Current capability and characteristic time vs. the driving frequency. (a) Current (current @ Vg 5 V and Vds 0.1 V) trend as a function of the HVDS time. Three different frequencies were applied: 10, 100, and 1,000 Hz. The degradation trends were fitted with a stretched exponential function. (b) The characteristic times τ that were extracted by the stretched exponential function shown in a, show the dependency on the frequency. (c) The current under HVDS conditions at various frequencies shows strong dependence on the number of pulse times.
