Figure 8
From: Impact of transient currents caused by alternating drain stress in oxide semiconductors
Schematic image and band state with defects in the degraded oxide TFT. (a) Three-dimensional schematic image of the degraded oxide semiconductor TFT by HVDS. At the near drain electrode, the disordered bonding has broken, which has created a dangling bond. The bond breakage (or unstable bonding with anti-sites) introduces a new obstacle to the flow of electrons. (b) The broken bonds create many defect states on the IGZO active layer at the drain side, and consequently impair the current capability of the distorted local host band structure.
